Back to matchesWe found a matchYour institution may have rights to this item. Sign in to continue.TitleAnhydrous HF etch reduces processing steps for DRAM capacitors.AuthorsChang, S.-L. Luke; Hanestad, Ron; Butterbaugh, Jeffery W.AbstractPresents information on an anhydrous hydrogen fluoride (AHF) etch process that reduces processing steps for dynamic random-access memory (DRAM) capacitors. AHF etch chemistry; Process optimization; Cylindrical capacitors with AHF processing.SubjectsHYDROGEN fluoride; RANDOM access memory; CAPACITORS; ETCHINGPublicationSolid State Technology, 1998, Vol 41, Issue 5, p71ISSN0038-111XPublication typeArticle