We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Colossal permittivity, low dielectric loss, and good thermal stability achieved in Ta-doped BaTiO<sub>3</sub> by B-site defect engineering.
- Authors
Huang, Chu; Meng, Yingzhi; Li, Chenlin; Wang, Dawei; Chen, Xue; Sun, Lixian; Peng, Biaolin; Lei, Xiuyun; Shen, Yufang; Liu, Laijun
- Abstract
High-performance colossal permittivity (ε′ > 104) plays an indispensable role in the development of electronic field. In this work, ultra-high dielectric permittivity (ε′ > 237, 294 @1 kHz) and low dielectric loss (0.012 @1 kHz) were simultaneously achieved in Ta-doped BaTi0.995Ta0.005O3 ceramics. Importantly, the dielectric permittivity changes less than 15% between − 55 and 200 °C, and the dielectric loss is less than 0.04. The excellent giant dielectric performance is related to the defect dipoles of electronic pins associated with electrons/oxygen vacancies/Ti3+, which are generated by B-site donor. And the thermal-activated short-range hopping of electrons is conformed to be the origin of low dielectric losses and excellent thermal stability. This work provides a strategy for achieving ultra-high dielectric permittivity, low dielectric loss, and excellent temperature stability of Ta-doped BaTiO3 simultaneously through B-site defect engineering.
- Publication
Journal of Materials Science: Materials in Electronics, 2023, Vol 34, Issue 34, p1
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-023-11623-z