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- Title
Room-temperature metal-insulator transition of MBE grown VO film investigated by temperature dependent resistance and transmittance.
- Authors
Wang, Minhuan; Fan, Lele; Bian, Jiming; Zhang, Dong; Liu, Hongzhu; Sun, Hongjun; Luo, Yingmin
- Abstract
VO films were grown on TiO (001) substrate by a radio frequency (RF)-plasma assisted oxide molecular beam epitaxy. An excellent reversible metal-to-insulator (MIT) transition accompanied with an abrupt change in both resistivity and infrared transmittance was observed at room temperature (RT), which was much lower than the 341 K for bulk single crystal VO. Remarkably, the MIT transition temperature (T) deduced from resistivity-temperature curve was well consistent with that obtained from the temperature dependent IR transmittance. The lowed T was supposed to be originated from the internal stress induced by the interface lattice mismatch between VO film and TiO substrate, this assumption was supported by both Raman measurement and X-ray diffraction (XRD) 2theta peak shift. This achievement will potentially open up new opportunities for advanced applications of VO-based devices where RT MIT is necessary.
- Subjects
VANADIUM dioxide; RADIO frequency; TITANIUM oxides; TRANSITION temperature; MOLECULAR beam epitaxy
- Publication
Journal of Materials Science: Materials in Electronics, 2017, Vol 28, Issue 15, p11046
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-017-6888-4