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- Title
Annealing effect on the formation of high- k dielectric in the W/ultrathin HfO/Si-substrate system.
- Authors
Rudakov, V.; Bogoyavlenskaya, E.; Denisenko, Yu.
- Abstract
Using a method of high-frequency magnetron sputtering, the structures W(150 nm)/HfO(5 nm)/Si(100) were prepared and were further annealed either at 500°C in vacuum for 30 min or in an atmosphere of argon at 950°C for 12 s. Study of the capacitance-voltage characteristics of these structures showed that high-temperature annealing leads to a decrease in the maximum specific capacitance in accumulation (from 4.8 × 10 to 3.2 × 10 F/cm) and dielectric constant (from 27 to 23). Using time-of-flight secondary-ion mass spectrometry, it is established that growth of a WO phase at the W/HfO interface and a HfSiO silicate phase at the HfO/Si (100) interface occurs during annealing. In addition, the total thickness of the intermediate oxide layer exceeds the thickness of the initial HfO film by 30%.
- Subjects
ANNEALING of metals; DIELECTRICS; TUNGSTEN; SILICON; SUBSTRATES (Materials science); MAGNETRON sputtering; VACUUM; THIN films
- Publication
Technical Physics Letters, 2012, Vol 38, Issue 11, p982
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785012110120