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- Title
Low-Temperature Mullite Formation in Ternary Oxide Coatings Deposited by ALD for High-Temperature Applications.
- Authors
Furlan, Kaline P.; Krekeler, Tobias; Ritter, Martin; Blick, Robert; Schneider, Gerold A.; Nielsch, Kornelius; Zierold, Robert; Janßen, Rolf
- Abstract
Atomic layer deposition (ALD) process presents thickness control in an Ångstrom scale due to its inherent surface self-limited reactions. In this work, an ALD super cycle approach, where a superposition of nanolaminates of SiO2 and Al2O3 is generated by cycling the precursors APTES-H2O-O3 and TMA-H2O, is used to deposit thin films with varying ratio of Al2O3:SiO2 into silicon wafers and into inverse photonic crystals. The resulting ternary oxide films deposited at low temperature (150 °C) are amorphous. However, conversion to mullite occurs at 1000 °C, way below the conversion temperatures found into powder processing or diphasic sol-gel routes (type II) and comparable to monophasic sol-gel synthesis. By means of such a mullite coating, the structural stability of an Al2O3 inverse photonic crystal is increased up to 1400 °C.
- Subjects
ATOMIC layer deposition; THERMAL stability; ALUMINUM oxide; NANOPARTICLES; NANOSTRUCTURED materials
- Publication
Advanced Materials Interfaces, 2017, Vol 4, Issue 23, pn/a
- ISSN
2196-7350
- Publication type
Article
- DOI
10.1002/admi.201700912