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- Title
Niobium Silicon Alloys for Kinetic Inductance Detectors.
- Authors
Calvo, M.; D'Addabbo, A.; Monfardini, A.; Benoit, A.; Boudou, N.; Bourrion, O.; Catalano, A.; Dumoulin, L.; Goupy, J.; Sueur, H.; Marnieros, S.
- Abstract
We are studying the properties of Niobium Silicon amorphous alloys as a candidate material for the fabrication of highly sensitive kinetic inductance detectors (KID), optimized for very low optical loads. As in the case of other composite materials, the NbSi properties can be changed by varying the relative amounts of its components. Using a NbSi film with T $$_c $$ = 1 K we have been able to obtain the first NbSi resonators, observe an optical response and acquire a spectrum in the band 50-300 GHz. The data taken show that this material has very high kinetic inductance $$L_k$$ and normal state surface resistivity $$\rho _n$$ . These properties are ideal for the development of KID. More measurements are planned to further characterize the NbSi alloy and fully investigate its potential.
- Subjects
NIOBIUM-silicon alloys; CHEMICAL kinetics; ELECTRIC inductance; MICROWAVE detectors; COMPOSITE materials; OPTICAL detectors
- Publication
Journal of Low Temperature Physics, 2014, Vol 176, Issue 3/4, p518
- ISSN
0022-2291
- Publication type
Article
- DOI
10.1007/s10909-013-1072-6