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- Title
Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain.
- Authors
Hu, W.; Wang, L.; Chen, X.; Guo, N.; Miao, J.; Yu, A.; Lu, W.
- Abstract
The plasmonic resonant phenomenon in the terahertz wave band for GaN high electron mobility transistors is investigated by using a finite difference time domain method. Strong resonant absorptions can be obtained where a large area slit grating-gate serves both as electrodes and coupler. Such kinds of plasmonic resonant detection devices are compatible to the well-developed GaN process, and possibly overcome the difficulty in fabricating ultra-short-gate devices for terahertz applications.
- Subjects
PLASMONS (Physics); LIGHT absorption; GALLIUM nitride; MODULATION-doped field-effect transistors; TERAHERTZ technology; ELECTRON mobility; BRAGG gratings; ULTRASHORT laser pulses
- Publication
Optical & Quantum Electronics, 2013, Vol 45, Issue 7, p713
- ISSN
0306-8919
- Publication type
Article
- DOI
10.1007/s11082-013-9652-x