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- Title
Effect of thermal annealing on the surface, optical, and structural properties of p-type ZnSe thin films grown on GaAs (100) substrates.
- Authors
Kim, M. J.; Lee, H. S.; Lee, J. Y.; Kim, T. W.; Yoo, K. H.; Kim, M. D.
- Abstract
Examines the effect of annealing of p-type ZnSe epilayers grown on n-type GaAs semiconductor substrates by using molecular beam epitaxy. Capacitance-voltage measurements; Photoluminescence intensities; Surface roughness.
- Subjects
ZINC selenide; THIN films; GALLIUM arsenide semiconductors; ANNEALING of crystals; MOLECULAR beam epitaxy; PHOTOLUMINESCENCE; SURFACE roughness
- Publication
Journal of Materials Science, 2004, Vol 39, Issue 1, p323
- ISSN
0022-2461
- Publication type
Article
- DOI
10.1023/B:JMSC.0000007766.16695.29