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- Title
Enhanced Negative-Bias Illumination Temperature Stability of Praseodymium-Doped InGaO Thin-Film Transistors.
- Authors
Yubo Zhu; Hua Xu; Miao Xu; Min Li; Jianhua Zou; Hong Tao; Lei Wang; Junbiao Peng
- Abstract
The performance of praseodymium-doped indium gallium oxide (PrIGO) as the channel layer of thin-film transistors (TFTs) is widely investigated. The TFTs with Pr doping exhibit a remarkable suppression of the light-induced instability including a negligible photoresponse and significant enhancement in negative gate bias stress under illumination (NBITS). The structure, chemical composition, and oxygen vacancy concentration of PrIGO films are analyzed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. In addition, the low-frequency noise test is introduced to analyze the variation of trap density with Pr doping. The results indicate that the trap states induced by Pr doping facilitate the capture of free electrons by positively charged oxygen vacancies under illumination, which leads to the suppression of photoinduced carriers in the conduction band.
- Subjects
INDIUM gallium zinc oxide; TRANSISTORS; X-ray photoelectron spectroscopy; CONDUCTION bands; INDIUM oxide; LIGHTING; CHEMICAL-looping combustion
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2021, Vol 218, Issue 14, p1
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.202000812