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- Title
Ostwald ripening in segregated Si<sub> x</sub>N/Si<sub> y</sub>N multilayers.
- Authors
Jiang, Xiaofan; Ma, Zhongyuan; Yu, Jie; Ren, Sheng; Yang, Huafeng; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan
- Abstract
In this study, we investigate the microstructure and formation of segregated silicon nanocrystals (nc-Si) from annealed Si-rich Si xN/Si yN multilayers. It is found the nc-Si are separated and arranged in every sublayer with two different grain sizes. Through XPS and Raman analysis, it is discovered that Si atoms diffuse from the Si yN sublayers with smaller nc-Si to the Si xN sublayers with larger nc-Si during annealing. Meanwhile, the grain size of Si xN sublayers increase and that of Si yN sublayers decrease, compared to single layer sample. It is suggested that the atomic diffusion with grain size change phenomenon is ascribed to coalescence-like growth followed by Ostwald ripening process, which eventually results in Si atoms transport from small Si clusters in Si yN sublayers to large Si cluster in Si xN sublayers and forms the segregated nc-Si multilayers. This work gives us better understanding of the nc-Si growth and atomic diffusion in annealed Si-rich multilayers.
- Subjects
DIFFUSION; GRAIN; MULTILAYERS; NANOCRYSTALS; OSTWALD ripening; SILICON
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2016, Vol 213, Issue 7, p1878
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201532897