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- Title
Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method.
- Authors
Tanaka, Atsushi; Inotsume, Syo; Harada, Shunta; Hanada, Kenji; Honda, Yoshio; Ujihara, Toru; Amano, Hiroshi
- Abstract
Herein, a newly developed birefringence microscope is used to observe dislocations in gallium nitride (GaN) substrates. The comparison results of the observation method using this microscope with other observation methods, such as X‐ray topography and Raman microscopy, confirms that dislocations in a GaN substrate can be detected with a birefringence microscope. In addition, the observation can be carried out as easily as with an optical microscope. It is also found that under certain observation conditions, the direction of the edge component of dislocations can be determined.
- Subjects
BIREFRINGENCE; GALLIUM nitride; OPTICAL microscopes; X-ray topography; RAMAN microscopy; X-ray microscopy
- Publication
Physica Status Solidi (B), 2020, Vol 257, Issue 4, p1
- ISSN
0370-1972
- Publication type
Article
- DOI
10.1002/pssb.201900553