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Topologically Protected All‐Optical Memory (Adv. Electron. Mater. 10/2022).
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202270050
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- Article
Space Charge Behavior in Epoxy‐Based Dielectrics: Progress and Perspective (Adv. Electron. Mater. 10/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202270054
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- Article
Fluorinated Graphene Contacts and Passivation Layer for MoS<sub>2</sub> Field Effect Transistors (Adv. Electron. Mater. 10/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202270053
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- Article
On‐Chip Integrated High Gain Complementary MoS<sub>2</sub> Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors (Adv. Electron. Mater. 10/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200480
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Masthead: (Adv. Electron. Mater. 10/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202270051
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- Article
Homogeneous Palladium Diselenide pn‐Junction Diodes for Reconfigurable Circuit Applications (Adv. Electron. Mater. 10/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202270049
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- Article
Topologically Protected All‐Optical Memory.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200579
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- Article
Electrode Engineering in MoS<sub>2</sub> MOSFET: Different Semiconductor/Metal Interfaces.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200513
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- Article
Photo‐Synaptic Oxide Transistors with Al<sub>2</sub>O<sub>3</sub>/SiO<sub>x</sub> Stacked Gate Dielectric Exhibiting 1024 Conduction States with Good Linearity.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200494
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- Article
On‐Chip Integrated High Gain Complementary MoS<sub>2</sub> Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200480
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- Article
Electrical Field Driven Structural Evolutions of Polymorphic Nanodomains in Ferroelectric Ba(Zr,Ti)O<sub>3</sub> Films.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200465
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- Article
Sputtered Electrolyte‐Gated Transistor with Modulated Metaplasticity Behaviors.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200463
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- Article
Power‐Efficient and Highly Uniform BiFeO<sub>3</sub>‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200435
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- Article
Raman Spectroscopy of Few‐Layers TaS<sub>2</sub> and Mo‐Doped TaS<sub>2</sub> with Enhanced Superconductivity.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200457
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Soft Biomaterials Based Flexible Artificial Synapse for Neuromorphic Computing.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200449
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Inverter and Ternary Content‐Addressable Memory Based on Carbon Nanotube Transistors Using Chemical Doping Strategy.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200424
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- Article
Filamentary TaO<sub>x</sub>/HfO<sub>2</sub> ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200448
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- Article
Introducing Spontaneously Phase‐Separated Heterogeneous Interfaces Enables Low Power Consumption and High Reliability for Phase Change Memory.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200437
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- Article
Remarkably High Conductivity and Power Factor in D–D′‐type Thermoelectric Polymers Based on Indacenodithiophene.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200456
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- Article
Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra‐Thin Films.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200432
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A Conductive Molecular Semiconductor Composite with Over 160 °C Glass Transition Temperature for Heat‐Resistant Perovskite Solar Cells.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200425
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- Article
An OFET‐Based Involutive Logic Circuit with Wide‐Range Threshold Shift Compensability.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200442
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- Article
Second‐Order Memristor Based on All‐Oxide Multiferroic Tunnel Junction for Biorealistic Emulation of Synapses.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200421
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- Article
All‐Electrical Programmable Domain‐Wall Spin Logic‐In‐Memory Device.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200412
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- Article
Self‐Powered and High‐Performance Alternating Current Photodetectors to enhance Broadband Photodetection.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200392
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- Article
High‐Performance p‐type 2D FET Based on Monolayer GeC with High Hole Mobility: A DFT‐NEGF Study.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200388
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- Article
Ultralow Current Switching of Synthetic‐Antiferromagnetic Magnetic Tunnel Junctions Via Electric‐Field Assisted by Spin–Orbit Torque.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200382
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- Article
Two‐Dimensional Tellurene Transistors with Low Contact Resistance and Self‐Aligned Catalytic Thinning Process.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200380
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- Article
Self‐Imaging Based Programmable Spin‐Wave Lookup Tables.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200373
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- Article
Wireless Multiferroic Memristor with Coupled Giant Impedance and Artificial Synapse Application.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200370
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- Article
Strain Driven Conducting Domain Walls in a Mott Insulator.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200366
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- Article
Low Energy and Analog Memristor Enabled by Regulation of Ru ion Motion for High Precision Neuromorphic Computing.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200365
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- Article
Insights into the Origins of Minority Carrier Traps in Solution‐Processed Organic Semiconductors and Their Effects on Transistor Photostability.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200355
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- Article
Hydrogen Atom Doping—A Versatile Method for Modulated Interface Resistive Switching.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200353
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- Article
A Vis‐SWIR Photonic Synapse with Low Power Consumption Based on WSe<sub>2</sub>/In<sub>2</sub>Se<sub>3</sub> Ferroelectric Heterostructure.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200343
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- Article
Unveiling the Complex Magnetization Reversal Process in 3D Nickel Nanowire Networks.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200342
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- Article
Dual Piezoelectric/Triboelectric Behavior of BTO/SU‐8 Photopatternable Nanocomposites for Highly Efficient Mechanical Energy Harvesting.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200338
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- Article
Temporal Pattern Coding in Ionic Memristor‐Based Spiking Neurons for Adaptive Tactile Perception.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200334
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- Article
Highly Flexible and Asymmetric Hexagonal‐Shaped Crystalline Structured Germanium Dioxide‐Based Multistate Resistive Switching Memory Device for Data Storage and Neuromorphic Computing.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200332
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- Article
Artificial Synapse Based on Bio‐Hierarchical Porous Memristor Driven by Multilevel‐Ions Migration.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200269
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- Article
Two‐Terminal Self‐Gating Random‐Access Memory Based on Partially Aligned 2D Heterostructures.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200282
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- Article
Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200280
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- Article
Resistive Switching in Ferroelectric Bi<sub>2</sub>FeCrO<sub>6</sub> Thin Films and Impact on the Photovoltaic Effect.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200276
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- Article
Mapping Thermoelectric Transport in a Multicomponent Alloy Space.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200327
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- Article
A Van Der Waals Photo‐Ferroelectric Synapse.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200326
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- Article
Few‐layered MoS<sub>2</sub> Based Vertical van der Waals p‐n Homojunction by Highly‐efficient N<sub>2</sub> Plasma Implantation.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200299
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- Article
Humidity‐Enabled Organic Artificial Synaptic Devices with Ultrahigh Moisture Resistivity.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200320
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- Article
X‐ray Detectors With Ultrahigh Sensitivity Employing High Performance Transistors Based on a Fully Organic Small Molecule Semiconductor/Polymer Blend Active Layer.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200293
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- Article
Development of Low‐Temperature Doping Process in CdSe‐Nanocrystal Thin Films for Flexible Electronic and Optoelectronic Devices.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200297
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- Article
Space Charge Behavior in Epoxy‐Based Dielectrics: Progress and Perspective.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200259
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- Publication type:
- Article