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- Title
2.3- μm High-Power Type I Quantum-Well GaInAsSb/AlGaAsSb/GaSb Laser Diode Arrays with Increased Fill Factor.
- Authors
Donetsky, D.; Chen, J.; Shterengas, L.; Kipshidze, G.; Westerfeld, D.
- Abstract
Arrays of 100- μm-wide GaInAsSb/AlGaAsSb laser diode emitters with a fill factor of 30% have been fabricated. Suppression of lateral lasing was achieved by the incorporation of grooves between the emitters. A quasi-continuous wave (CW) (30 μs, 300 Hz) output power of 16.7 W from a 4-mm-long laser bar has been demonstrated.
- Subjects
QUANTUM wells; DIODES; INDUSTRIAL lasers; ECHO suppression; EMITTER-coupled logic circuits; SOLID freeform fabrication
- Publication
Journal of Electronic Materials, 2008, Vol 37, Issue 12, p1770
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-008-0495-3