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- Title
Hydrogenated silicon oxycarbonitride films. Part III. Thermodynamic modeling of the Si-C-N-O-H system.
- Authors
Golubenko, A.; Fainer, N.; Titova, E.
- Abstract
The thermodynamic modeling of the deposition of the condensed phase of a complex composition has been performed in the Si-C-N-O-H system in the broad temperature range of 300-1300 K under total pressure P = 6−7×10 Torr and residual air pressure in reactor P = 5 × 10 Torr using the initial gas mixtures of organosilicon compound, hexamethyldisilazane (HMDS), with nitrogen, oxygen, air mixture (O + 4N), and a variable mixture of oxygen with nitrogen (O + xN). The temperature boundaries of multiphase ranges, where one can anticipate the deposition of silicon oxycarbonitride, silicon oxycarbides, and silicon oxynitride, have been determined.
- Subjects
THERMODYNAMICS research; THIN film research; SILICON research; ORGANOSILICON compounds; SOLID state electronics
- Publication
Glass Physics & Chemistry, 2015, Vol 41, Issue 3, p334
- ISSN
1087-6596
- Publication type
Article
- DOI
10.1134/S1087659615030062