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- Title
Origin of Porous Silicon Photoluminescence Peaks in the Wavelength Range 460-700 nm.
- Authors
Abramova, E. N.; Khort, A. M.; Yakovenko, A. G.; Tsygankova, M. V.; Syrov, Yu. V.; Sorokin, T. A.; Shvets, V. I.
- Abstract
The change in the photoluminescence peaks of porous silicon at λ = 640-670 and 540-560 nm at 300 and 77 K, as well as their behavior after low-temperature annealing of the samples at 500°С, has been studied. The change in these peaks correlated with that in the IR spectra. The peak at 640-670 nm has been explained by the existence Si-OH groups on the porous silicon layers and the peak at 540-560 nm, by the photoluminescence of the silicon matrix per se.
- Subjects
POROUS silicon; PHOTOLUMINESCENCE; WAVELENGTHS; ANNEALING of metals; INFRARED spectra
- Publication
Doklady Chemistry, 2018, Vol 481, Issue 2, p166
- ISSN
0012-5008
- Publication type
Article
- DOI
10.1134/S0012500818080037