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- Title
Effect of the tin content on the composition and optical and electrical properties of ITO films deposited onto silicon and glass by ultrasonic spray pyrolysis.
- Authors
Untila, G.; Kost, T.; Chebotareva, A.; Timofeyev, M.
- Abstract
With the aim of optimizing the properties of tin-doped indium oxide (ITO) films as applied to silicon solar cells, ∼100-nm-thick ITO films were deposited onto ( nn)-Cz-Si and glass substrates by ultrasonic spray pyrolysis in argon at a temperature of 380°C. The relative Sn and In content in the film-forming solution was varied in the range of [Sn]/[In] = 0-12 at %. Optimal parameters are exhibited by the films produced at [Sn]/[In] = 2-3 at % in the solution ([Sn]/([In] + [Sn]) = 5.2-5.3 at % in the film). For such films deposited onto glass substrates, the effective absorptance weighted over the solar spectrum in the wavelength range from 300 to 1100 nm is 1.6-2.1%. The sheet resistance R of the films deposited onto silicon and glass is, correspondingly, 45-55 and 165-175 Ω▭. After eight months of storage in air, the resistance R of the optimal films remained unchanged; for the other films, the resistance R increased: for the films on silicon and glass, the resistance R became up to 2 and 14 times higher, respectively.
- Subjects
ELECTRIC properties of indium tin oxide; SILICON solar cells; GLASS; TEMPERATURE effect; PYROLYSIS; OPTICAL properties; SOLAR spectra
- Publication
Semiconductors, 2012, Vol 46, Issue 7, p962
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782612070202