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- Title
Electron mobility in the GaAs/InGaAs/GaAs quantum wells.
- Authors
Vainberg, V. V.; Pylypchuk, A. S.; Baidus, N. V.; Zvonkov, B. N.
- Abstract
The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two types of sample doping -- in the quantum well and in the adjacent barrier at a small distance from the well -- were used. In the case of shallow wells, in such structures the experimental results may be well described by known electron scattering mechanisms taking into account the shape of real envelope wave functions and band bending due to non-uniform distribution of the positive and negative space charges along the growth direction of heterostructure layers. In the case of delta-like doping in the well, a good agreement between experiment and calculations is achieved, if one takes into account a contribution to electron transport of the states of the impurity band formed by the delta-impurity beneath the bottom of the lowest quantum subband.
- Subjects
ELECTRON mobility; GALLIUM arsenide; QUANTUM wells; TEMPERATURE effect; HETEROSTRUCTURES; DOPED semiconductors; ELECTRON transport
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, Vol 16, Issue 2, p152
- ISSN
1560-8034
- Publication type
Article