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- Title
Effects of annealing on thermoelectric properties of SbTe thin films prepared by radio frequency magnetron sputtering.
- Authors
Fang, Bo; Zeng, Zhigang; Yan, Xiaoxia; Hu, Zhiyu
- Abstract
Antimony telluride (SbTe) thin films were deposited on silicon substrates at room temperature (300 K) by radio frequency magnetron sputtering method. The effects of annealing in N atmosphere on their thermoelectric properties were investigated. The microstructure and composition of these films were characterized using scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction, respectively. The electrical transport properties of the thin films, in terms of electrical conductivity and Seebeck coefficient were determined at room temperature. The carrier concentration and mobility were calculated from the Hall coefficient measurement. Both of the Seebeck coefficient and Hall coefficient measurement showed that the prepared SbTe thin films were p-type semiconductor materials. By optimizing the annealing temperature, the power factor achieved a maximum value of 18.02 μW cm K when the annealing temperature was increased to 523 K for 6 h with a maximum electrical conductivity (1.17 × 10S/cm) and moderate Seebeck coefficient (123.9 μV/K).
- Subjects
ANTIMONY telluride; ANNEALING of metals; THERMOELECTRIC apparatus &; appliances; RADIO frequency; MAGNETRON sputtering
- Publication
Journal of Materials Science: Materials in Electronics, 2013, Vol 24, Issue 4, p1105
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-012-0888-1