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- Title
Annealing behavior of TiO-sheathed GaO nanowires.
- Authors
Changhyun Jin; Hyunsoo Kim; Kyungjoon Baek; Hyoun Woo Kim; Chongmu Lee
- Abstract
TiO-sheathed GaO one-dimensional (1D) nanostructures were synthesized by thermal evaporation of GaN powders and then sputter-deposition of TiO. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis results indicate that the GaO cores are of a single crystal nature with a monoclinic structure while the TiO shells are amorphous. Photoluminescence (PL) emission is slightly decreased in intensity by TiO coating, but it is significantly increased by thermal annealing in an oxygen atmosphere. The emission peak is also shifted from ~500 to ~550 nm by oxygen annealing. The increase in the green emission is due to the increase in the concentration of the Ga vacancies in the cores by the inflow of oxygen during oxygen annealing. On the other hand, annealing in a nitrogen atmosphere leads to a red shift of the emission to ~700 nm originating from nitrogen doping.
- Subjects
NANOWIRES; ELECTRON microscopy; X-ray diffraction; PHOTOLUMINESCENCE; NITROGEN
- Publication
Journal of Materials Science: Materials in Electronics, 2010, Vol 21, Issue 11, p1154
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-009-0037-7