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- Title
Population Inversion and IR Amplification Induced by Intersubband Electron Transitions and Resonant Auger Processes in Quantum Wells.
- Authors
Vorob’ev, L. E.
- Abstract
A mechanism for electron population inversion and mid-IR amplification is proposed for the case of the current or optical injection of electron–hole pairs into the undoped region of a heterojunction with quantum wells. The presence of an upper long-lived size-quantization level and resonant Auger recombination in the well are crucial features of the mechanism. A long electron lifetime at the upper level or a relatively low probability of electron scattering to the other subbands is achieved by choosing the shape of the well and its parameters in such a way as to provide weak overlap between the upper level and two lower level electronic wave functions. Resonant Auger recombination plays a positive role. It stabilizes the electron and hole concentrations at lower levels and makes a substantial contribution to the excitation of the upper electronic level and the population inversion. The degree of population inversion and the gain coefficient are estimated. © 2000 MAIK “Nauka / Interperiodica”.
- Subjects
EXCITON theory; QUANTUM wells; AUGER effect
- Publication
JETP Letters, 2000, Vol 71, Issue 12, p511
- ISSN
0021-3640
- Publication type
Article