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- Title
Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes.
- Authors
Seo, Tae Hoon; Hahn, Yoon-Bong; Kim, Yong Hwan; Park, Sungchan; Kim, Myung Jong; Park, Ah Hyun; Lee, Gun Hee; Suh, Eun-Kyung; Jeong, Mun Seok; Lee, Young Hee
- Abstract
We report the growth of high-quality GaN layer on single-walled carbon nanotubes (SWCNTs) and graphene hybrid structure (CGH) as intermediate layer between GaN and sapphire substrate by metal-organic chemical vapor deposition (MOCVD) and fabrication of light emitting diodes (LEDs) using them. The SWCNTs on graphene act as nucleation seeds, resulting in the formation of kink bonds along SWCNTs with the basal plane of the substrate. In the x-ray diffraction, Raman and photoluminescence spectra, high crystalline quality of GaN layer grown on CGH/sapphire was observed due to the reduced threading dislocation and efficient relaxation of residual compressive strain caused by lateral overgrowth process. When applied to the LED structure, the current-voltage characteristics and electroluminescence (EL) performance exhibit that blue LEDs fabricated on CGH/sapphire well-operate at high injection currents and uniformly emit over the whole emission area. We expect that CGH can be applied for the epitaxial growth of GaN on various substrates such as Si and MgO, which can be a great advantage in electrical and thermal properties of optical devices fabricated on them.
- Subjects
GALLIUM nitride; CARBON nanotubes; GRAPHENE; LIGHT emitting diodes; SAPPHIRES; METAL organic chemical vapor deposition; PHOTOLUMINESCENCE; RAMAN spectra
- Publication
Scientific Reports, 2015, p7747
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep07747