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- Title
Si<sup>−</sup> useful yields measured in Si, SiC, Si<sub>3</sub> N<sub>4</sub> and SiO<sub>2</sub>: comparison between the Storing Matter technique and SIMS.
- Authors
Kasel, B.; Wirtz, T.
- Abstract
The storing matter technique was developed to tackle quantification issues encountered in SIMS due to matrix effects. Here, we demonstrate the quantitative capabilities of the technique by comparing the useful yield for Si− in different matrices exhibiting matrix effects in conventional SIMS analysis. Additionally, the effect of the collector material (Ag, Au, Cu and Ta) on the storing matter useful yield is investigated. Copyright © 2014 John Wiley & Sons, Ltd.
- Subjects
CHEMICAL yield; MATRICES (Mathematics); SILICON; SILICON carbide; ANALYTICAL chemistry
- Publication
Surface & Interface Analysis: SIA, 2014, Vol 46, p39
- ISSN
0142-2421
- Publication type
Article
- DOI
10.1002/sia.5607