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- Title
Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion.
- Authors
Zhuraev, Kh. N.; Yusupov, A.; Gulyamov, A. G.; Khazhiev, M. U.; Saidov, D. Sh.; Adilov, N. B.
- Abstract
A study has been made of the activation energy of the conductance of a p–n-4H-SiC 〈Al〉 structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a carbon- and silicon-vacancy flux produced by the oxidation of the silicon surface.
- Subjects
ACTIVATION energy; ALUMINUM construction; DIFFUSION; ALUMINUM carbide; SILICON carbide
- Publication
Journal of Engineering Physics & Thermophysics, 2020, Vol 93, Issue 4, p1036
- ISSN
1062-0125
- Publication type
Article
- DOI
10.1007/s10891-020-02205-5