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- Title
3D NAND Flash Based on Planar Cells.
- Authors
Silvagni, Andrea
- Abstract
In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all-around (GAA) cell devices—against architectures that are based on planar cell devices. The differences and similarities between the two classes of architectures are highlighted. The differences between architectures using floating-gate (FG) and charge-trap (CT) devices are also considered. Although the current production of 3D NAND is based on GAA cell devices, it is suggested that architectures with planar cell devices could also be viable for mass production.
- Subjects
NAND gates; USB flash drives; FLASH memory; RANDOM access memory; SEMICONDUCTOR storage devices; MASS production
- Publication
Computers (2073-431X), 2017, Vol 6, Issue 4, p28
- ISSN
2073-431X
- Publication type
Article
- DOI
10.3390/computers6040028