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- Title
Photovoltaic X-ray Detectors Based on Epitaxial GaAs Structures.
- Authors
Achmadullin, R. A.; Dvoryankin, V. F.; Dvoryankina, G. G.; Dikaev, Yu. M.; Ermakov, M. G.; Ermakova, O. N.; Krikunov, A. I.; Kudryashov, A. A.; Petrov, A. G.; Telegin, A. A.
- Abstract
A new type of the photovoltaic X-ray detector based on epitaxial p[sup +]-n-n′-n[sup +] GaAs structures is proposed, which provides for a high efficiency of charge carrier collection in a nonbiased operation regime at room temperature. The GaAs structures were grown by vapor phase epitaxy on heavily doped n[sup +]-GaAs substrates. The X-ray sensitivity range covers the effective energies from 8 to 120 keV. The maximum output signal in the short-circuit regime is 30 µA min/(Gy cm²). The detector response to T-radiation from a [sup 137]Cs [660 keV] radioactive isotope was measured.
- Subjects
DETECTORS; X-rays; GALLIUM arsenide semiconductors
- Publication
Technical Physics Letters, 2002, Vol 28, Issue 1, p15
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1448629