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- Title
Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy (Phys. Status Solidi B 5/2016).
- Authors
Springbett, Helen; Griffiths, James; Ren, Christopher; O'Hanlon, Tom; Barnard, Jonathan; Sahonta, Suman‐Lata; Zhu, Tongtong; Oliver, Rachel
- Abstract
Nitride‐based quantum dots (QDs) show promise as sources for single photon emission, enabling comparably high temperature emission and access to the blue and green spectral region. Some droplets forming during modified droplet epitaxy on non‐polar (11‐20) surfaces of InGaN epilayers on GaN are associated with underlying ring‐like structures. The work by Springbett et al. (pp. 840–844) discusses droplet etching as a possible mechanism for ring formation, whereby In and Ga atoms are incorporated into the droplet and diffuse to the edges. Thereafter, recrystallization occurs, leading to the formation of a ring. It is hypothesised that the droplet then creeps in a direction determined by the crystallographic anisotropy and the surface energetics. Once this movement halts, etching continues. The resulting structure consists of a recession enclosed by a double ring. Transmission electron microscopy (TEM) analysis shows the droplets move along the ⟨0001⟩ c‐axis, and energy dispersive X‐ray spectroscopy (EDXS) indicates that they have a very high In content. These studies may help reveal the underlying QD formation mechanism during modified droplet epitaxy.
- Subjects
PHYSICS periodicals; PHYSICAL sciences periodicals
- Publication
Physica Status Solidi (B), 2016, Vol 253, Issue 5, p793
- ISSN
0370-1972
- Publication type
Article
- DOI
10.1002/pssb.201670530