We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
narrowing window.
- Abstract
The article offers information on a study by researchers of Hanyang University and Tohoku University which investigates the dependency on bias polarity of the phase changing material-electrode interface in phase change random access memory (PRAM) devices. Topics include the semi-conductor Ge2Sb2Te5 (GST), phase change in PRAM devices, and advantages of PRAM technology.
- Subjects
PHASE change materials; ELECTRODES; PHASE change memory; SEMICONDUCTORS; TOHOKU University
- Publication
Electronics Letters (Wiley-Blackwell), 2018, Vol 54, Issue 6, p332
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2018.0672