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- Title
Determination of Piezoelectric Fields Across InGaN/GaN Quantum Wells by Means of Electron Holography.
- Authors
Deguchi, Masashi; Tanaka, Shigeyasu; Tanji, Takayoshi
- Abstract
Electron holography was used to determine the piezoelectric fields across an InGaN/GaN quantum-well structure. Holograms were taken with the sample intentionally tilted such that adjacent layers overlapped. The phase changes in the overlapping regions were analyzed to determine the piezoelectric fields in each well. It was shown that the piezoelectric field was strongest at the central part of the quantum-well structure. The field strength averaged over eight InGaN wells was ~2.2 MV/cm.
- Subjects
PIEZOELECTRIC materials; QUANTUM wells; ENERGY-band theory of solids; ELECTRON holography; LASER recording
- Publication
Journal of Electronic Materials, 2010, Vol 39, Issue 6, p815
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-010-1092-9