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- Title
Flexible Sol-Gel—Processed Y 2 O 3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process.
- Authors
Kim, Hyeon-Joong; Kim, Do-Won; Lee, Won-Yong; Kim, Kyoungdu; Lee, Sin-Hyung; Bae, Jin-Hyuk; Kang, In-Man; Kim, Kwangeun; Jang, Jaewon
- Abstract
Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated, and thinner and smother Y2O3 films than those formed using other methods can be fabricated. The flexible UV/ozone-assisted photochemical annealing process-based ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar RRAM without any forming process. Furthermore, the pure and amorphous-phase Y2O3 films formed via this process showed a decreased leakage current and an increased high-resistance status (HRS) compared with the films formed using other methods. Therefore, RRAM devices can be realized on plastic substrates using a thermal-energy-free UV/ozone-assisted photochemical annealing process. The fabricated devices exhibited a resistive window (ratio of HRS/low-resistance status (LRS)) of >104, with the HRS and LRS values remaining almost the same (i.e., limited deterioration occurred) for 104 s and up to 102 programming/erasing operation cycles.
- Subjects
NONVOLATILE random-access memory; INDIUM tin oxide; STRAY currents
- Publication
Materials (1996-1944), 2022, Vol 15, Issue 5, p1899
- ISSN
1996-1944
- Publication type
Article
- DOI
10.3390/ma15051899