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- Title
Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films.
- Authors
Ming-Cheng Kao; Hone-Zern Chen; San-Lin Young; Kai-Huang Chen; Jung-Lung Chiang; Jen-Bin Shi
- Abstract
Bi0.8Pr0.2Fe0.95Mn0.05O3/Bi3.96Gd0.04Ti2.95W0.05O12 (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO2/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films exhibited well-saturated ferromagnetic and ferroelectric hysteresis loops because of the electro-magnetic coupling induced by the MF/FE structure. The remnant magnetization (2Mr) and remnant polarization (2Pr) were 4.6 emu/cm3 and 62 μC/cm², respectively. Moreover, the bipolar I-V switching curves of BPFMO/BGTWO bilayer thin films resistive random access memory (RRAM) devices were discussed, and investigated for LRS/HRS.
- Subjects
PEROVSKITE; THIN films; X-ray diffraction; SOL-gel processes; RANDOM access memory
- Publication
Materials (1996-1944), 2017, Vol 10, Issue 11, p1327
- ISSN
1996-1944
- Publication type
Article
- DOI
10.3390/ma10111327