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Effect of copper concentration on the structure of intermetallics and graphite additives of Al–Cu/C powder composites.
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- Applied Nanoscience, 2022, v. 12, n. 4, p. 1245, doi. 10.1007/s13204-021-01785-9
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- Article
Synthesis of the metastable Al<sub>3</sub>Mg phase in Mg–Al–C system by mechanical alloying.
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- Applied Nanoscience, 2022, v. 12, n. 3, p. 741, doi. 10.1007/s13204-021-01724-8
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- Article
Effect of graphite additives on solid-state reactions in eutectic Al–Cu powder mixtures during high-energy ball milling.
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- Applied Nanoscience, 2020, v. 10, n. 8, p. 2803, doi. 10.1007/s13204-019-01086-2
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- Article
p-GaSb(Ox)/ n-GaSb native-oxide heterojunctions: Non-vacuum process and photoelectric properties.
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- Semiconductors, 2014, v. 48, n. 4, p. 455, doi. 10.1134/S106378261404023X
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- Article
Creation and photoelectric properties of Ox/ p-InAs heterostructures.
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- Semiconductors, 2012, v. 46, n. 10, p. 1270, doi. 10.1134/S1063782612100120
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Photosensitive Ox/GaAs heterojunctions: Creation and properties.
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- Semiconductors, 2012, v. 46, n. 6, p. 783, doi. 10.1134/S1063782612060164
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Creation and studies of the photosensitivity of Ox/ n-GaP structures.
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- Semiconductors, 2012, v. 46, n. 6, p. 779, doi. 10.1134/S1063782612060152
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- Article
Photosensitivity of ZnO/CdS/Cu(In,Ga)Se/Mo thin-film solar cells fabricated on various substrates.
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- Semiconductors, 2012, v. 46, n. 2, p. 221, doi. 10.1134/S1063782612020200
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Photosensitive thin-film In/ p-PbSnS Schottky barriers: Fabrication and properties.
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- Semiconductors, 2011, v. 45, n. 8, p. 1053, doi. 10.1134/S1063782611080094
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Quaternary (FeInS)(MnInS) alloys and photosensitive structures on their basis.
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- Semiconductors, 2011, v. 45, n. 7, p. 912, doi. 10.1134/S1063782611070062
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- Article
Photosensitive structures based on CuInTe single crystals: Development and properties.
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- Semiconductors, 2011, v. 45, n. 5, p. 607, doi. 10.1134/S106378261105006X
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Surface-barrier structures on single crystals of CdMgMnTe quaternary solid solutions: Creation and properties.
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- Semiconductors, 2011, v. 45, n. 4, p. 461, doi. 10.1134/S106378261104018X
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Development and photoelectric properties of In/ p-AgAsS surface-barrier structures.
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- Semiconductors, 2010, v. 44, n. 8, p. 1025, doi. 10.1134/S1063782610080129
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Photosensitivity of n-CdS/ p-CdTe heterojunctions obtained by chemical surface deposition of CdS.
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- Semiconductors, 2010, v. 44, n. 3, p. 318, doi. 10.1134/S1063782610030085
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Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties.
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- Semiconductors, 2010, v. 44, n. 3, p. 354, doi. 10.1134/S1063782610030140
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Growth of the (In<sub>2</sub>S<sub>3</sub>)<sub> x</sub>(FeIn<sub>2</sub>S<sub>4</sub>)<sub>1 − x</sub> single crystals and properties of photoelectric structures on their basis.
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- Semiconductors, 2010, v. 44, n. 1, p. 37, doi. 10.1134/S1063782610010057
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Discovery of the (In<sub>2</sub>S<sub>3</sub>)<sub> x</sub>(MnIn<sub>2</sub>S<sub>4</sub>)<sub>1 − x</sub> solid solutions and fabrication of photosensitive structures based on them.
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- Semiconductors, 2010, v. 44, n. 1, p. 45, doi. 10.1134/S1063782610010070
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Growing FeIn<sub>2</sub>S<sub>4</sub> single crystals and fabrication of photosensitive structures on their basis.
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- Semiconductors, 2009, v. 43, n. 11, p. 1510, doi. 10.1134/S1063782609110190
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Photosensitive structures on single crystals of MnIn<sub>2</sub>S<sub>4</sub>: Preparation and properties.
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- Semiconductors, 2009, v. 43, n. 11, p. 1506, doi. 10.1134/S1063782609110189
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Electrical properties of In<sub>2</sub>Se<sub>3</sub> single crystals and photosensitivity of Al/In<sub>2</sub>Se<sub>3</sub> Schottky barriers.
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- Semiconductors, 2009, v. 43, n. 9, p. 1138, doi. 10.1134/S1063782609090061
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Photosensitive structures based on ZnP<sub>2</sub> single crystals of monoclinic and tetragonal modifications: Fabrication and properties.
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- Semiconductors, 2009, v. 43, n. 7, p. 858, doi. 10.1134/S1063782609070069
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Photoelectrochemical cells based on In<sub>2</sub>S<sub>3</sub> single crystals.
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- Semiconductors, 2009, v. 43, n. 4, p. 425, doi. 10.1134/S1063782609040046
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Photoelectrochemical cells based on ternary compounds CuIn<sub>2 n + 1</sub>Se<sub>3 n + 2</sub> ( n = 3–6).
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- Semiconductors, 2009, v. 43, n. 3, p. 374, doi. 10.1134/S106378260903021X
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Photosensitivity of the Ni- n-GaAs Schottky barriers.
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- Semiconductors, 2009, v. 43, n. 1, p. 29, doi. 10.1134/S1063782609010072
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- Article
Properties of CuIn<sub>3</sub>Se<sub>5</sub> crystals and In/CuIn<sub>3</sub>Se<sub>5</sub> structures.
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- Semiconductors, 2007, v. 41, n. 11, p. 1307, doi. 10.1134/S106378260711005X
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- Article
Photosensitivity of the structures on the Cu(In,Ga)(S,Se)<sub>2</sub> films obtained by thermal treatment in the S and Se vapors.
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- Semiconductors, 2007, v. 41, n. 10, p. 1173, doi. 10.1134/S1063782607100089
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Fabrication and properties of point structures formed on n-InSe single crystals.
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- Semiconductors, 2007, v. 41, n. 10, p. 1170, doi. 10.1134/S1063782607100077
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- Article
Cadmium-free thin-film Cu(In,Ga)Se<sub>2</sub>/(In<sub>2</sub>S<sub>3</sub>) heterophotoelements: Fabrication and properties.
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- Semiconductors, 2007, v. 41, n. 8, p. 973, doi. 10.1134/S1063782607080210
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Fabrication and photoelectric properties of oxide/CuIn<sub>5</sub>Se<sub>8</sub> heterojunctions.
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- Semiconductors, 2007, v. 41, n. 2, p. 155, doi. 10.1134/S1063782607020078
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Photoelectric properties of In/In<sub>2</sub>Se<sub>3</sub> structures.
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- Semiconductors, 2007, v. 41, n. 1, p. 52, doi. 10.1134/S1063782607010125
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- Article
Photoelectric phenomena in the Cu (Al, In)/ p-CuIn<sub>3</sub>Se<sub>5</sub> Schottky barriers.
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- Semiconductors, 2007, v. 41, n. 1, p. 43, doi. 10.1134/S1063782607010101
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Schottky barriers based on n-In<sub>2</sub>S<sub>3</sub> films obtained by laser-induced evaporation.
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- Semiconductors, 2007, v. 41, n. 1, p. 47, doi. 10.1134/S1063782607010113
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Photoelectric cells based on n-Ox/n-InSe heterojunctions: fabrication and properties.
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- Semiconductors, 2006, v. 40, n. 11, p. 1321, doi. 10.1134/S1063782606110121
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- Article
Surface-barrier In/ p-CuGa<sub>3</sub>Te<sub>5</sub> and In/ p-CuGa<sub>5</sub>Te<sub>8</sub> structures: Fabrication and properties.
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- Semiconductors, 2006, v. 40, n. 9, p. 1028, doi. 10.1134/S1063782606090077
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- Article
Effect of γ-ray radiation on photosensitivity of ZnO/CuIn<sub>3</sub>Se<sub>5</sub> heterojunctions.
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- Semiconductors, 2006, v. 40, n. 1, p. 64, doi. 10.1134/S1063782606010118
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- Article
Photosensitivity of Photocells Based on ZnO/CdS/Cu(In, Ga)Se<sub>2</sub> Heterostructures and Exposed to γ-ray Radiation.
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- Semiconductors, 2005, v. 39, n. 12, p. 1406, doi. 10.1134/1.2140314
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- Article
Photosensitivity of Heterostructures Based on Finely Ground Semiconductor Phases.
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- Semiconductors, 2005, v. 39, n. 11, p. 1294, doi. 10.1134/1.2128453
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- Article
Photoelectric Properties of Surface-Barrier Structures Based on Zn<sub>2 – 2x</sub>Cu<sub>x</sub>In<sub>x</sub>Se<sub>2</sub> Films Obtained by Selenization.
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- Semiconductors, 2005, v. 39, n. 9, p. 1035, doi. 10.1134/1.2042594
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- Article
Photoconversion in n-ZnO:Al/PdPc/p-CuIn<sub>3</sub>Se<sub>5</sub> Structures.
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- Semiconductors, 2005, v. 39, n. 4, p. 402, doi. 10.1134/1.1900252
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Fabrication and Photoelectric Properties of n-ZnO:Al/PdPc/p-Si Structures.
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- Semiconductors, 2005, v. 39, n. 4, p. 409, doi. 10.1134/1.1900254
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- Article
The Charge-Transport Mechanisms and Photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se<sub>2</sub> Structures.
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- Semiconductors, 2005, v. 39, n. 3, p. 331, doi. 10.1134/1.1882796
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Fabrication and Photoelectric Properties of the ZnO–Cu(In,Ga)Se<sub>2</sub> Heterojunctions.
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- Semiconductors, 2005, v. 39, n. 2, p. 202, doi. 10.1134/1.1864199
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- Article
Photovoltaic Properties of n-ZnO:Al/PbPc/p-Si Structures.
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- Semiconductors, 2005, v. 39, n. 2, p. 218, doi. 10.1134/1.1864202
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- Article
Photoelectric Properties of ZnO/CuPc/Si Structures.
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- Semiconductors, 2004, v. 38, n. 11, p. 1308, doi. 10.1134/1.1823065
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- Article
Photosensitive Structures Based on HgGa<sub>2</sub>S<sub>4</sub> Single Crystals: Preparation and Properties.
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- Semiconductors, 2004, v. 38, n. 11, p. 1291, doi. 10.1134/1.1823061
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- Article
Fabrication and Photosensitivity of Heterojunctions Based on CuIn<sub>3</sub>Se<sub>5</sub> Crystals.
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- Semiconductors, 2004, v. 38, n. 10, p. 1192, doi. 10.1134/1.1808827
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- Article
Photosensitive Structures Based on Single-Crystal Silicon and Phthalocyanine CuPc: Fabrication and Properties.
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- Semiconductors, 2004, v. 38, n. 9, p. 1018, doi. 10.1134/1.1797478
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- Article
Oscillations of Induced Photopleochroism in ZnO/GaAs Heterojunctions.
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- Semiconductors, 2004, v. 38, n. 4, p. 393, doi. 10.1134/1.1734664
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- Article
Photosensitivity of the Structures Based on Quinary Solid Solutions of the Isoelectronic Series of Germanium.
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- Semiconductors, 2004, v. 38, n. 4, p. 406, doi. 10.1134/1.1734667
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Photosensitive Structures Based on the Compound AgIn[sub 11]S[sub 17].
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- Semiconductors, 2004, v. 38, n. 2, p. 165, doi. 10.1134/1.1648369
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- Article