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- Title
Toward Energy‐Efficient Ferroelectric Field‐Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO<sub>2</sub> Films.
- Authors
Lehninger, David; Sünbül, Ayse; Seidel, Konrad; Lederer, Maximilian
- Abstract
Many modern applications require fast and reliable nonvolatile memory. Ferroelectric (FE) memories, such as FE field‐effect transistors and FE random access memories, show great promise in meeting these requirements. Another key factor is power efficiency. In the case of FE memories, the coercive field Ec$E_{c}$ is a critical parameter for improving power consumption. This article introduces and reviews four promising methods to tailor the 2Ec$2 E_{_{c}}$ of FE films based on Zr‐doped HfO2$\left(\text{HfO}\right)_{2}$: 1) HfxZr1−xO2$\left(\text{Hf}\right)_{x} \left(\text{Zr}\right)_{1 - x} \left(\text{O}\right)_{2}$ composites with various Hf contents, 2) hybrid stacks consisting of antiferroelectric HfxZr1−xO2$\left(\text{Hf}\right)_{x} \left(\text{Zr}\right)_{1 - x} \left(\text{O}\right)_{2}$ sublayers with excess Zr (x <$&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;lt;$ 0.5) and FE Hf0.5Zr0.5O2$\left(\text{Hf}\right)_{0.5} \left(\text{Zr}\right)_{0.5} \left(\text{O}\right)_{2}$ sublayers, 3) superlattice structures (also known as nanolaminates) consisting of HfO2$\left(\text{HfO}\right)_{2}$ and ZrO2$\left(\text{ZrO}\right)_{2}$ sublayers stacked on top of each other, and 4) Hf0.5Zr0.5O2$\left(\text{Hf}\right)_{0.5} \left(\text{Zr}\right)_{0.5} \left(\text{O}\right)_{2}$ films doped with an aluminum impurities. Electrical characterization of metal–FE–metal capacitor test structures confirms the suitability of all approaches. Analysis of the strengths and weaknesses is conducted, considering the tuning range, shape stability of the polarization versus electric field hysteresis loop, and the impact of these approaches on the remanent polarization 2Pr$2 P_{\text{r}}$.
- Subjects
FIELD-effect transistors; RANDOM access memory; POLARIZATION (Electricity); PHOTOVOLTAIC effect; HYSTERESIS loop; NONVOLATILE memory; ALUMINUM films
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2024, Vol 221, Issue 6, p1
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.202300712