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- Title
Structure and Cathodoluminescence Properties in Tb<sup>3+</sup> and Eu<sup>3+</sup> Doped AlN Films.
- Authors
Luo, Xuan; Wang, Xiaodan; Meng, Hechen; Chen, Huajun; Zeng, Xionghui; Gao, Xiaodong; Mao, Hongmin; Xu, Ke
- Abstract
For the first time, Tb3+ and Eu3+ co‐doped AlN films were prepared using ion implantation, and the crystal structure and cathodoluminescence (CL) properties of films were investigated. Raman scattering and X‐Ray diffraction (XRD) show that high‐dose Tb3+ implantation leads to an increase in internal compressive stress. The non‐radiative resonant energy transfer was suggested between the Tb3+ and defects in the AlN host. The energy transfer mechanism between Tb3+ and Eu3+ in AlN films is discussed. Adjusting the dose ratio of Eu3+ with respect to Tb3+ allows for effective control of chromaticity coordinates and color temperatures.
- Subjects
CATHODOLUMINESCENCE; ION implantation; ENERGY transfer; DIFFRACTIVE scattering; X-ray scattering; X-ray diffraction; RAMAN scattering
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2024, Vol 221, Issue 4, p1
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.202300625