We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
The orientation-selective growth of LaNiO[sub 3] films on Si(100) by pulsed laser deposition using a MgO buffer.
- Authors
Chen, X.Y.; Wong, K.H.; Mak, C.L.; Liu, J.M.; Yin, X.B.; Wang, M.; Liu, Z.G.
- Abstract
Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO[sub 3] (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively.
- Subjects
LANTHANUM compounds; CRYSTALLINE interfaces; METALLIC films
- Publication
Applied Physics A: Materials Science & Processing, 2002, Vol 75, Issue 4, p545
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s003390101048