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- Title
GEOMETRIC INVESTIGATION AND PERFORMANCE ANALYSIS OF SOI FINFET FOR RF/AF PARAMETERS.
- Authors
Srivastava, Nishant; Mani, Prashant
- Abstract
FinFET-based devices provide better and faster operational performance and, thus, are widely preferred to be integrated into a complex circuit application. The present paper has proposed a silicon on insulator (SOI) FinFET and studies the effect of hfin variations (1.3,1.0,0.7,0.25) and Wfin variations (1.0,0.6,0.25) on structure performance metrics, counting low-frequency limitations such as transconductance (Gm), output conductance (Gd), capacitances and voltage gain (Av). The structure clearly shows excellent efficiency for (i) hfin/Lg = 0.7 figure by increasing device gain and operational frequency; (ii) Wfin/Lg = 0.6 figure by optimizing structure intrinsic resistance, AV, and VEA, thereby making the device perform without even any substrate impact, according to simulations conducted using the SILVACO tool. The investigation has identified that structure length variation could provide varied performances, such as higher device-current being recommended for improved current drivability and smaller devices being preferred for reducing SCEs and increasing device immunization. The current study can serve as a starting point for 3-D device simulators looking to attain improved performance.
- Subjects
ATRIAL fibrillation; INTEGRATED circuits; RADIO frequency; ELECTRIC capacity; VOLTAGE
- Publication
Suranaree Journal of Science & Technology, 2022, Vol 29, Issue 5, p1
- ISSN
0858-849X
- Publication type
Article