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Equation of convective diffusion of a multicomponent mixture in a capillary for an arbitrary velocity field.
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- Fluid Dynamics, 2006, v. 41, n. 6, p. 976, doi. 10.1007/s10697-006-0112-1
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- Article
Model of Breakdown of MOS-Structures by the Mechanism of Anode Hydrogen Release.
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- Semiconductors, 2024, v. 58, n. 3, p. 197, doi. 10.1134/S1063782624030011
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- Article
On the Size Effect in MOS Structures under Ionizing Irradiation.
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- Semiconductors, 2022, v. 56, n. 4, p. 241, doi. 10.1134/S1063782622040017
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The Effect of Ionizing Irradiation on the Charge Distribution and Breakdown of MOSFETs.
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- Semiconductors, 2022, v. 56, n. 3, p. 160, doi. 10.1134/S1063782622020038
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- Article
Latent Accumulation of Surface States in MOS Structures after Exposure to Ionizing Radiation.
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- Semiconductors, 2021, v. 55, n. 6, p. 578, doi. 10.1134/S1063782621070046
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- Article
The Effect of the Ionizing Radiation Intensity on the Response of MOS Structures.
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- Semiconductors, 2021, v. 55, n. 2, p. 207, doi. 10.1134/S1063782621020068
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- Article
Dispersive Transport of Hydrogen in MOS Structures after Exposure to Ionizing Radiation.
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- Semiconductors, 2020, v. 54, n. 10, p. 1215, doi. 10.1134/S1063782620100036
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- Article
Model of the Effect of the Gate Bias on MOS Structures under Ionizing Radiation.
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- Semiconductors, 2020, v. 54, n. 2, p. 240, doi. 10.1134/S1063782620020025
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- Article
Model of the Negative-Bias Temperature Instability of p-MOS Transistors.
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- Semiconductors, 2020, v. 54, n. 2, p. 233, doi. 10.1134/S1063782620020037
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- Article
Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions.
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- Semiconductors, 2019, v. 53, n. 2, p. 153, doi. 10.1134/S1063782619020222
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- Article
Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection.
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- Semiconductors, 2018, v. 52, n. 13, p. 1732, doi. 10.1134/S1063782618130031
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- Article
Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate.
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- Semiconductors, 2018, v. 52, n. 6, p. 783, doi. 10.1134/S1063782618060027
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- Article
Influence of traps in silicon dioxide on the breakdown of MOS structures.
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- Semiconductors, 2017, v. 51, n. 8, p. 1062, doi. 10.1134/S1063782617080024
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- Article
Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen.
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- Semiconductors, 2016, v. 50, n. 6, p. 791, doi. 10.1134/S1063782616060099
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- Article
On the effect of bias on the behavior of MOS structures subjected to ionizing radiation.
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- Semiconductors, 2015, v. 49, n. 6, p. 774, doi. 10.1134/S1063782615060020
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- Article
Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions.
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- Semiconductors, 2015, v. 49, n. 3, p. 406, doi. 10.1134/S1063782615030203
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- Article
Model of the behavior of MOS structures under ionizing irradiation.
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- Semiconductors, 2014, v. 48, n. 4, p. 505, doi. 10.1134/S1063782614040046
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- Article
Model of boron diffusion from gas phase in silicon carbide.
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- Semiconductors, 2011, v. 45, n. 6, p. 705, doi. 10.1134/S1063782611060029
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- Article
A model of formation of fixed charge in thermal silicon dioxide.
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- Semiconductors, 2011, v. 45, n. 4, p. 467, doi. 10.1134/S1063782611040026
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- Article
Model of thermal oxidation of silicon with diffusion coefficient relaxation.
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- Semiconductors, 2010, v. 44, n. 13, p. 1637, doi. 10.1134/S106378261013004X
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Effect of silicon-surface orientation in the bulk model of thermal oxidation.
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- Semiconductors, 2009, v. 43, n. 10, p. 1373, doi. 10.1134/S1063782609100212
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- Article
Simulation of interaction between nickel and silicon carbide during the formation of ohmic contacts.
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- Semiconductors, 2009, v. 43, n. 7, p. 885, doi. 10.1134/S1063782609070100
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- Article
Redistribution of Al in implanted SiC layers as a result of thermal annealing.
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- Semiconductors, 2009, v. 43, n. 5, p. 557, doi. 10.1134/S1063782609050029
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- Article
Model of thermal oxidation of silicon at the volume-reaction front.
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- Semiconductors, 2008, v. 42, n. 11, p. 1370, doi. 10.1134/S1063782608110249
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Simulation of near-surface proton-stimulated diffusion of boron in silicon.
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- Semiconductors, 2008, v. 42, n. 3, p. 257, doi. 10.1134/S1063782608030020
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Out-diffusion of impurity via the kick-out mechanism during gettering.
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- Semiconductors, 2007, v. 41, n. 9, p. 1048, doi. 10.1134/S1063782607090084
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- Article
The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation.
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- Semiconductors, 2006, v. 40, n. 8, p. 875, doi. 10.1134/S1063782606080021
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- Article
Simulation of aluminum diffusion in silicon in inert and oxidizing media.
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- Semiconductors, 2006, v. 40, n. 4, p. 379, doi. 10.1134/S1063782606040014
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- Article
The Influence of Oxygen on the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions.
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- Semiconductors, 2005, v. 39, n. 7, p. 742, doi. 10.1134/1.1992626
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- Article
Specific Features of the Segregation-Related Redistribution of Phosphorus during Thermal Oxidation of Heavily Doped Silicon Layers.
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- Semiconductors, 2005, v. 39, n. 6, p. 615, doi. 10.1134/1.1944848
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- Article
Simulation of the Concentration Dependence of Boron Diffusion in Silicon.
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- Semiconductors, 2004, v. 38, n. 3, p. 258, doi. 10.1134/1.1682322
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- Article
Redistribution of Ytterbium and Oxygen in Annealing of Silicon Layers Amorphized by Implantation.
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- Semiconductors, 2003, v. 37, n. 12, p. 1363, doi. 10.1134/1.1634654
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- Article
Some Aspects of Deriving Multicomponent Separation Potential.
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- Theoretical Foundations of Chemical Engineering, 2020, v. 54, n. 1, p. 240, doi. 10.1134/S0040579519060022
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- Article
Effect of Oxidizing Environments on the Diffusion–Segregation Boron Distribution in the Thermal Silicon Dioxide–Silicon System.
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- Technical Physics, 2003, v. 48, n. 5, p. 580, doi. 10.1134/1.1576471
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- Article
Metastable Ions in the Mass Spectrum of Uranium Hexafluoride.
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- Technical Physics, 2002, v. 47, n. 5, p. 648, doi. 10.1134/1.1479997
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The Exact Solution of the Equation for Diffusion of a Three-Component Mixture through a Capillary.
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- Technical Physics, 2001, v. 46, n. 11, p. 1367, doi. 10.1134/1.1418497
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A Perfect Centrifuge.
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- Technical Physics, 2000, v. 45, n. 9, p. 1122, doi. 10.1134/1.1318096
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Nonequilibrium thermodynamics SAW-induced acoustic flow.
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- Technical Physics, 1997, v. 42, n. 10, p. 1231, doi. 10.1134/1.1258807
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- Article
Anti-Methodological Discussions on the Efficient and Equitable in the Law.
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- Law of Ukraine, 2014, n. 1, p. 203
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Anti-Methodological Discussions on the Efficient and Equitable in the Law.
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- Law of Ukraine / Pravo Ukrainy, 2014, n. 1, p. 203
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- Article
High-Temperature Annealing as a Method for the Silicon Nanoclusters Growth in Stoichiometric Silicon Dioxide.
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- Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3969, doi. 10.1007/s11664-018-6280-z
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- Article
Pressure dependence of the mixing rate for the free convection of a binary gas mixture in a two-flask apparatus.
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- Technical Physics, 2016, v. 61, n. 7, p. 982, doi. 10.1134/S1063784216070033
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- Article
A Model of Reduction of Oxidation-Enhanced Diffusion in Heavily Doped Si Layers.
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- Semiconductors, 2003, v. 37, n. 6, p. 625, doi. 10.1134/1.1582525
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- Article
A Model for the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions.
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- Semiconductors, 2002, v. 36, n. 11, p. 1209, doi. 10.1134/1.1521217
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- Article
The Influence of Sinks of Intrinsic Point Defects on Phosphorus Diffusion in Si.
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- Semiconductors, 2002, v. 36, n. 11, p. 1260, doi. 10.1134/1.1521227
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- Article
Simulation of Low-Temperature Arsenic Diffusion from a Heavily Doped Silicon Layer.
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- Semiconductors, 2002, v. 36, n. 4, p. 370, doi. 10.1134/1.1469180
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- Article
Electrical Properties of Silicon Layers Implanted with Erbium and Oxygen Ions in a Wide Dose Range and Thermally Treated in Different Temperature Conditions.
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- Semiconductors, 2002, v. 36, n. 3, p. 358, doi. 10.1134/1.1461417
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- Article
Electrical Properties of Silicon Layers Implanted with Ytterbium Ions.
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- Semiconductors, 2002, v. 36, n. 2, p. 126, doi. 10.1134/1.1453423
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- Article
Influence of the Screening Effect on Passivation of p-Type Silicon by Hydrogen.
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- Semiconductors, 2002, v. 36, n. 1, p. 21, doi. 10.1134/1.1434507
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- Article
A Model of High- and Low-Temperature Phosphorus Diffusion in Silicon by a Dual Pair Mechanism.
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- Semiconductors, 2001, v. 35, n. 11, p. 1231, doi. 10.1134/1.1418063
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- Article