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Simulation and Analysis of the Optical Characteristics of Cylindrical Micropillars with InAs/GaAs Quantum Dots.
Published in:
JETP Letters, 2022, v. 116, n. 9, p. 613, doi. 10.1134/S0021364022800207
By:
- Bobrov, M. A.;
- Blokhin, S. A.;
- Maleev, N. A.;
- Kuz'menkov, A. G.;
- Blokhin, A. A.;
- Vasil'ev, A. P.;
- Guseva, Yu. A.;
- Rakhlin, M. V.;
- Galimov, A. I.;
- Serov, Yu. M.;
- Troshkov, S. I.;
- Ustinov, V. M.;
- Toropov, A. A.
Publication type:
Article
Source of Indistinguishable Single Photons Based on Epitaxial InAs/GaAs Quantum Dots for Integration in Quantum Computing Schemes.
Published in:
JETP Letters, 2021, v. 113, n. 4, p. 252, doi. 10.1134/S0021364021040093
By:
- Galimov, A. I.;
- Rakhlin, M. V.;
- Klimko, G. V.;
- Zadiranov, Yu. M.;
- Guseva, Yu. A.;
- Troshkov, S. I.;
- Shubina, T. V.;
- Toropov, A. A.
Publication type:
Article
InGaAlN heterostructures for LEDs grown on patterned sapphire substrates.
Published in:
Technical Physics Letters, 2008, v. 34, n. 11, p. 924, doi. 10.1134/S1063785008110072
By:
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Nikolaev, A. E.;
- Lundina, E. Yu.;
- Sakharov, A. V.;
- Troshkov, S. I.;
- Tsatsul'nikov, A. F.
Publication type:
Article
Visualization of the Ion Projected Range Region in GaAs Irradiated with Argon Ions.
Published in:
Technical Physics Letters, 2000, v. 26, n. 1, p. 75, doi. 10.1134/1.1262746
By:
- Busov, V. M.;
- Venus, G. B.;
- Gusinskiı, G. M.;
- Il’inskaya, N. D.;
- Naıdenov, V. O.;
- Pasternak, A. A.;
- Portnoı, E. L.;
- Troshkov, S. I.
Publication type:
Article
Formation of SiC Mesastructures with Gently Sloping Sidewalls by Dry Selective Etching through a Photoresist Mask.
Published in:
Technical Physics, 2020, v. 65, n. 6, p. 957, doi. 10.1134/S1063784220060195
By:
- Lebedeva, N. M.;
- Samsonova, T. P.;
- Il'inskaya, N. D.;
- Troshkov, S. I.;
- Ivanov, P. A.
Publication type:
Article
Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks.
Published in:
Semiconductors, 2018, v. 52, n. 14, p. 1894, doi. 10.1134/S1063782618140166
By:
- Lebedev, D. V.;
- Vlasov, A. S.;
- Kulagina, M. M.;
- Troshkov, S. I.;
- Guseva, Yu. A.;
- Pelucchi, E.;
- Gocalinska, A.;
- Juska, G.;
- Romanova, A. Yu.;
- Buriak, P. A.;
- Smirnov, V. I.;
- Shelaev, A. V.;
- Bykov, V. A.;
- Mintairov, A. M.
Publication type:
Article
Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1770, doi. 10.1134/S1063782618130158
By:
- Semenov, A. N.;
- Nechaev, D. V.;
- Troshkov, S. I.;
- Nashchekin, A. V.;
- Brunkov, P. N.;
- Jmerik, V. N.;
- Ivanov, S. V.
Publication type:
Article
Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands.
Published in:
Semiconductors, 2018, v. 52, n. 5, p. 622, doi. 10.1134/S1063782618050056
By:
- Evropeytsev, E. A.;
- Semenov, A. N.;
- Nechaev, D. V.;
- Jmerik, V. N.;
- Kaibyshev, V. Kh.;
- Troshkov, S. I.;
- Brunkov, P. N.;
- Usikova, A. A.;
- Ivanov, S. V.;
- Toropov, A. A.
Publication type:
Article
Structural and optical properties of InAlN/GaN distributed Bragg reflectors.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 949, doi. 10.1134/S1063782610070201
By:
- Usov, S. O.;
- Zavarin, E. E.;
- Tsatsul’nikov, A. F.;
- Lundin, V. V.;
- Sakharov, A. V.;
- Nikolaev, A. E.;
- Sinitsyn, M. A.;
- Kryzhanovskaya, N. V.;
- Troshkov, S. I.;
- Ledentsov, N. N.
Publication type:
Article
Properties of GaAsN nanowires grown by magnetron-sputtering deposition.
Published in:
Semiconductors, 2009, v. 43, n. 7, p. 906, doi. 10.1134/S106378260907015X
By:
- Soshnikov, I. P.;
- Cirlin, G. E.;
- Nadtochii, A. M.;
- Dubrovskii, V. G.;
- Bukin, M. A.;
- Petrov, V. A.;
- Busov, V. M.;
- Troshkov, S. I.
Publication type:
Article
Highly Efficient Semiconductor Emitter of Single Photons in the Red Spectral Range.
Published in:
JETP Letters, 2019, v. 109, n. 3, p. 145, doi. 10.1134/S0021364019030135
By:
- Rakhlin, M. V.;
- Belyaev, K. G.;
- Klimko, G. V.;
- Sedova, I. V.;
- Kulagina, M. M.;
- Zadiranov, Yu. M.;
- Troshkov, S. I.;
- Guseva, Yu. A.;
- Terent'ev, Ya. V.;
- Ivanov, S. V.;
- Toropov, A. A.
Publication type:
Article
Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 4, p. 851, doi. 10.1002/pssa.201431912
By:
- Rozhavskaya, M. M.;
- Lundin, W. V.;
- Troshkov, S. I.;
- Tsatsulnikov, A. F.;
- Dubrovskii, V. G.
Publication type:
Article
Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser.
Published in:
Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 17, p. 1354, doi. 10.1049/el.2015.2325
By:
- Kryzhanovskaya, N. V.;
- Moiseev, E. I.;
- Kudashova, Yu. V.;
- Zubov, F. I.;
- Lipovskii, A. A.;
- Kulagina, M. M.;
- Troshkov, S. I.;
- Zadiranov, Yu. M.;
- Livshits, D. A.;
- Maximov, M. V.;
- Zhukov, A. E.
Publication type:
Article
Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes.
Published in:
Technical Physics Letters, 2023, v. 49, p. S215, doi. 10.1134/S1063785023900819
By:
- Maleev, N. A.;
- Kuzmenkov, A. G.;
- Kulagina, M. M.;
- Vasyl'ev, A. P.;
- Blokhin, S. A.;
- Troshkov, S. I.;
- Nashchekin, A. V.;
- Bobrov, M. A.;
- Blokhin, A. A.;
- Voropaev, K. O.;
- Bugrov, V. E.;
- Ustinov, V. M.
Publication type:
Article
InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics.
Published in:
Technical Physics Letters, 2019, v. 45, n. 11, p. 1092, doi. 10.1134/S1063785019110075
By:
- Maleev, N. A.;
- Vasil'ev, A. P.;
- Kuzmenkov, A. G.;
- Bobrov, M. A.;
- Kulagina, M. M.;
- Troshkov, S. I.;
- Maleev, S. N.;
- Belyakov, V. A.;
- Petryakova, E. V.;
- Kudryashova, Yu. P.;
- Fefelova, E. L.;
- Makartsev, I. V.;
- Blokhin, S. A.;
- Ahmedov, F. A.;
- Egorov, A. V.;
- Fefelov, A. G.;
- Ustinov, V. M.
Publication type:
Article
Interference of emission from disk-shaped lasers based on quantum-confined AlGaAsSb/InGaAsSb nanoheterostructures.
Published in:
Technical Physics Letters, 2010, v. 36, n. 7, p. 626, doi. 10.1134/S1063785010070126
By:
- Imenkov, A. N.;
- Sherstnev, V. V.;
- Monakhov, A. M.;
- Grebenshchikova, E. A.;
- Golovin, A. S.;
- Sipovskaya, M. A.;
- Starostenko, D. A.;
- Larchenkov, M. I.;
- Troshkov, S. I.;
- Tarasov, D. I.;
- Baranov, A. N.;
- Yakovlev, Yu. P.
Publication type:
Article

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