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- Title
Light-Emitting Si:Er Structures Produced by Molecular-Beam Epitaxy: High-Resolution Photoluminescence Spectroscopy.
- Authors
Kryzhkov, D. I.; Sobolev, N. A.; Andreev, B. A.; Denisov, D. V.; Krasil'nik, Z. F.; Shek, E. I.
- Abstract
The photoluminescence spectra of light-emitting structures based on silicon layers doped with erbium in the course of growth by molecular-beam epitaxy at temperatures ranging from 400 to 700°C are studied at 77 K with a resolution of no worse than 1 cm–1. For the layers grown at the temperatures ≤500°C, the narrow lines related to erbium are dominant in the spectra. The full width at the half-maximum of these lines is no larger than 9 cm–1. In this case, at least two types of centers involving the Er3+ ions and carbon impurity are observed. For the layers grown at higher temperatures of epitaxial growth, the broader lines ( ≥40 cm–1) corresponding to the Er3+ ions in the SiOx precipitates are dominant in the spectra. The dependence of the integrated intensity of photoluminescence of the Er-related centers on the temperature of epitaxial growth is represented by a curve with a peak at 500°C. © 2005 Pleiades Publishing, Inc.
- Subjects
ERBIUM; SILICON; MOLECULAR beam epitaxy; PHOTOLUMINESCENCE; CRYSTAL growth
- Publication
Semiconductors, 2005, Vol 39, Issue 12, p1399
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.2140312