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- Title
Ge/Si Waveguide Photodiodes with Built-In Layers of Ge Quantum Dots for Fiber-Optic Communication Lines.
- Authors
Yakimov, A. I.; Dvurechenskii, A. V.; Kirienko, V. V.; Stepina, N. P.; Nikiforov, A. I.; Ul'yanov, V. V.; Chaikovskii, S. V.; Volodin, V. A.; Efremov, M. D.; Seksenbaev, M. S.; Shamirzaev, T. S.; Zhuravlev, K. S.
- Abstract
The results of research aimed at the development of high-efficiency Ge/Si-based photodetectors for fiber-optic communication applications are reported. The photodetectors are designed as vertical p–i–n diodes on silicon-on-insulator substrates in combination with waveguide lateral geometry and contain Ge quantum-dot layers. The layer density of quantum dots is 1 × 1012cm–2; the dot size in the plane of growth is ∼8 nm. Unprecedentedly high quantum efficiency suitable for the range of telecommunication wavelengths is attained; specifically, in the waveguides illuminated from the end side, the efficiency was as high as 21 and 16% at 1.3 and 1.55 μm, respectively. © 2004 MAIK “Nauka / Interperiodica”.
- Subjects
WAVEGUIDES; PHOTODIODES; FIBER optics; VACUUM tubes; SEMICONDUCTORS; TELECOMMUNICATION
- Publication
Semiconductors, 2004, Vol 38, Issue 10, p1225
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1808834