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- Title
Numerical Optimization of Thickness and Optical Band Gap of Absorber and Buffer Layers in Earth-Abundant Cu<sub>2</sub>ZnSnS<sub>4</sub> Thin-Film Solar Cells.
- Authors
Achour, L.; Khemiri, N.; Kanzari, M.
- Abstract
In this work, numerical simulations were employed to examine the influence of thickness and band gap energy of the Cu2ZnSnS4 (CZTS) absorber and Zn(O,S) buffer layer on the performance of the earth-abundant and nontoxic Mo/Cu2ZnSnS4/Zn(O,S)/i-ZnO/ZnO:Al structure. Firstly, simulation was performed on the CZTS-based solar cell with experimental values of thickness (610 nm) and band gap energy (1.51 eV) obtained for the absorber layer CZTS. We found an open-circuit voltage Voc = 1.17 V, a short-circuit current density Jsc = 23.26 mA/cm2, a fill factor FF = 57.31%, and a conversion efficiency η = 15.61%. Then we varied the thickness (from 500 nm to 3000 nm) and gap (from 1.40 eV to 1.60 eV) of CZTS thin film and concluded that the optimized thickness and band gap energy were 2400 nm and 1.48 eV, respectively. Finally, we used these values to found the optimal performance of the device. The optimized results were FF = 21.24%, Jsc = 28.05 mA /cm2, Voc = 3.63 V, and η = 21.64%. It is noted that the solar cell performance remained stable by varying the thickness and gap energy of the Zn(O,S) buffer layer.
- Subjects
BUFFER layers; BAND gaps; SOLAR cells; PHOTOVOLTAIC power systems; THIN films; ENERGY bands
- Publication
Journal of Electronic Materials, 2024, Vol 53, Issue 7, p4188
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-024-11110-z