We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Microstructure of a CrSi<sub>2</sub> Transition Layer Produced by Hot Pressing of Cr and Si.
- Authors
Lukasov, M. S.; Arkharova, N. A.; Orekhov, A. S.; Rakova, E. V.; Solomkin, F. Yu.; Klechkovskaya, V. V.
- Abstract
Hot pressing of a Si single crystal in the bulk of electrolytic Cr powder at 1213 K, with subsequent annealing in air, leads to the formation of an intermediate polycrystalline silicide layer at the interface between the initial components. The phase composition and microstructure of the transition layer and its vicinity were investigated by scanning electron microscopy, X-ray energy-dispersive microanalysis, and electron backscatter diffraction. The transition layer has a crystal structure of the hexagonal phase of chromium disilicide (sp. gr. P6222). An additional annealing up to 120 h leads to insignificant recrystallization of small grains into larger ones.
- Subjects
X-ray microanalysis; MICROSTRUCTURE; RECRYSTALLIZATION (Metallurgy); SCANNING electron microscopy; HOT pressing; CRYSTAL structure
- Publication
Crystallography Reports, 2023, Vol 68, Issue 4, p615
- ISSN
1063-7745
- Publication type
Article
- DOI
10.1134/S1063774523700281