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- Title
Localized UV emitters on the surface of β-Ga<sub>2</sub>O<sub>3</sub>.
- Authors
Huso, Jesse; McCluskey, Matthew D.; Yu, Yinchuan; Islam, Md Minhazul; Selim, Farida
- Abstract
Monoclinic gallium oxide (β-Ga2O3) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n-type. Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga2O3 has not been regarded as a promising material for light emission. In this work, optical and structural imaging methods revealed the presence of localized surface defects that emit in the near-UV (3.27 eV, 380 nm) when excited by sub-bandgap light. The PL emission of these centers is extremely bright—50 times brighter than that of single-crystal ZnO, a direct-gap semiconductor that has been touted as an active material for UV devices.
- Subjects
GALLIUM compounds; METALLIC surfaces; POWER electronics; BAND gaps; SEMICONDUCTORS
- Publication
Scientific Reports, 2020, Vol 10, Issue 1, pN.PAG
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/s41598-020-76967-6