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- Title
Rapid-thermal-anneal-based internal gettering for germanium-doped Czochralski silicon.
- Authors
Chen, Jiahe; Yang, Deren; Ma, Xiangyang; Que, Duanlin
- Abstract
The internal gettering (IG) effects involved with a rapid thermal anneal (RTA) in germanium-doped Czochralski silicon (GCz-Si) wafer have been investigated. It was found that germanium doping could enhance the oxygen precipitation in bulk while shrinking the denuded zone width near the surface through pre-RTA at high temperature plus low–high temperature conventional furnace anneals. Rapid cooling rate after RTA was clarified to be beneficial for oxygen precipitation for GCz-Si wafer. It was suggested that the germanium doping could increase the vacancy concentration in Cz-Si during RTA by forming the germanium–vacancy complexes. In contrast to that in Cz-Si wafer, the smaller-sized higher-density oxygen precipitates were presented in the nucleation anneals, then followed RTA pretreatment while more oxygen precipitates survived during ramping processes after nucleation anneals in the GCz-Si wafer. Enhanced heterogeneous nucleation and reduced critical radius of precipitates associated with the germanium–vacancy complexes have been proposed for the oxygen precipitation enhancement.
- Subjects
RAPID thermal processing; GERMANIUM; SILICON; OXYGEN; NUCLEATION; HIGH temperatures; PRECIPITATION (Chemistry)
- Publication
Applied Physics A: Materials Science & Processing, 2009, Vol 94, Issue 4, p905
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-008-4847-x