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- Title
380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure.
- Authors
Sung-Bum Bae; Sung-Bok Kim; Dong-Churl Kim; Eun Soo Nam; Sung-Mook Lim; Jeong-Hwan Son; Yi-Sang Jo
- Abstract
In this paper, we demonstrate the capabilities of 380-nm ultraviolet (UV) light-emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi-structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al-metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.
- Subjects
LIGHT emitting diode design &; construction; ULTRAVIOLET radiation; METAL organic chemical vapor deposition; QUANTUM wells; SAPPHIRES; INDIUM gallium nitride; ALUMINUM gallium nitride
- Publication
ETRI Journal, 2013, Vol 35, Issue 4, p566
- ISSN
1225-6463
- Publication type
Article
- DOI
10.4218/etrij.13.1912.0029