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A Novel Mesoporous CaO-Loaded In2O3 Material for CO2 Sensing.
Published in:
Advanced Functional Materials, 2007, v. 17, n. 15, p. 2957, doi. 10.1002/adfm.200601072
By:
- Prim, A.;
- Pellicer, E.;
- Rossinyol, E.;
- Peiró, F.;
- Cornet, A.;
- Morante, J. R.
Publication type:
Article
Synthesis and Characterization of Chromium-Doped Mesoporous Tungsten Oxide for Gas Sensing Applications.
Published in:
Advanced Functional Materials, 2007, v. 17, n. 11, p. 1801, doi. 10.1002/adfm.200600722
By:
- Rossinyol, E.;
- Prim, A.;
- Pellicer, E.;
- Arbiol, J.;
- Hernández-Ramírez, F.;
- Peiró, F.;
- Cornet, A.;
- Morante, J. R.;
- Solovyov, L. A.;
- Tian, B.;
- Bo, T.;
- Zhao, D.
Publication type:
Article
Nanocrystalline Metal Oxides from the Injection of Metal Oxide Sols in Coordinating Solutions: Synthesis, Characterization, Thermal Stabilization, Device Processing, and Gas-Sensing Properties.
Published in:
Advanced Functional Materials, 2006, v. 16, n. 11, p. 1488, doi. 10.1002/adfm.200500652
By:
- Epifani, M.;
- Díaz, R.;
- Arbiol, J.;
- Comini, E.;
- Sergent, N.;
- Pagnier, T.;
- Siciliano, P.;
- Faglia, G.;
- Morante, J. R.
Publication type:
Article
Ultraviolet Raman scattering in ZnO nanowires: quasimode mixing and temperature effects.
Published in:
Journal of Raman Spectroscopy, 2011, v. 42, n. 2, p. 153, doi. 10.1002/jrs.2664
By:
- Alarcón-Lladó, E.;
- Ibáñez, J.;
- Cuscó, R.;
- Artús, L.;
- Prades, J. D.;
- Estradé, S.;
- Morante, J. R.
Publication type:
Article
Impact of Carbon Concentration on the Interface Density of States of Metal-Oxide Si1--x--y GexCy (Strained) Capacitators.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 9, p. 1022, doi. 10.1007/s11664-004-0030-0
By:
- Cuadras, A.;
- Garrido, B.;
- Morante, J. R.;
- Fonseca, L.;
- Pressel, K.;
- Tillack, B.;
- Grabolla, T.
Publication type:
Article
Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition.
Published in:
Applied Physics A: Materials Science & Processing, 2010, v. 100, n. 1, p. 287, doi. 10.1007/s00339-010-5802-1
By:
- Zardo, I.;
- Conesa-Boj, S.;
- Estradé, S.;
- Yu, L.;
- Peiro, F.;
- i Cabarrocas, P. Roca;
- Morante, J. R.;
- Arbiol, J.;
- i Morral, A. Fontcuberta
Publication type:
Article
Mesoporous Silica: A Suitable Adsorbent for Amines.
Published in:
Nanoscale Research Letters, 2009, v. 4, n. 11, p. 1303, doi. 10.1007/s11671-009-9396-5
By:
- Zamani, Cyrus;
- Illa, Xavi;
- Abdollahzadeh-Ghom, Sara;
- Morante, J. R.;
- Rodríguez, Albert Romano
Publication type:
Article
Photocatalytic Hydrogen Evolution Using Bi-Metallic (Ni/Pt) Na2Ti3O7 Whiskers: Effect of the Deposition Order.
Published in:
Catalysts (2073-4344), 2019, v. 9, n. 3, p. 285, doi. 10.3390/catal9030285
By:
- Garay-Rodríguez, Luis F.;
- Murcia-López, S.;
- Andreu, T.;
- Moctezuma, Edgar;
- Torres-Martínez, Leticia M.;
- Morante, J. R.
Publication type:
Article
Synthesis of Silicon Nanowires with Wurtzite Crystalline Structure by Using Standard Chemical Vapor Deposition.
Published in:
Advanced Materials, 2007, v. 19, n. 10, p. 1347, doi. 10.1002/adma.200602318
By:
- Fontcuberta i Morral, A.;
- Arbiol, J.;
- Prades, J. D.;
- Cirera, A.;
- Morante, J. R.
Publication type:
Article
Raman scattering and disorder effect in Cu2ZnSnS4.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 4, p. 258, doi. 10.1002/pssr.201307073
By:
- Valakh, M. Y.;
- Kolomys, O. F.;
- Ponomaryov, S. S.;
- Yukhymchuk, V. O.;
- Babichuk, I. S.;
- Izquierdo‐Roca, V.;
- Saucedo, E.;
- Perez‐Rodriguez, A.;
- Morante, J. R.;
- Schorr, S.;
- Bodnar, I. V.
Publication type:
Article
Self-assembled quantum dots in a nanowire system for quantum photonics.
Published in:
Nature Materials, 2013, v. 12, n. 5, p. 439, doi. 10.1038/nmat3557
By:
- Heiss, M.;
- Fontana, Y.;
- Gustafsson, A.;
- Wüst, G.;
- Magen, C.;
- O'Regan, D. D.;
- Luo, J. W.;
- Ketterer, B.;
- Conesa-Boj, S.;
- Kuhlmann, A. V.;
- Houel, J.;
- Russo-Averchi, E.;
- Morante, J. R.;
- Cantoni, M.;
- Marzari, N.;
- Arbiol, J.;
- Zunger, A.;
- Warburton, R. J.;
- Fontcuberta i Morral, A.
Publication type:
Article
Shrinkage Effects of the Conduction Zone in the Electrical Properties of Metal Oxide Nanocrystals: The Basis for Room Temperature Conductometric Gas Sensor.
Published in:
Journal of Sensors, 2009, p. 1, doi. 10.1155/2009/783675
By:
- Manzanares, M.;
- Andreu, T.;
- Prades, J. D.;
- Arbiol, J.;
- Hernandez-Ramírez, F.;
- Cirera, A.;
- Morante, J. R.
Publication type:
Article
Analysis of Thermal Capture of the Acceptor Level of Gold in Silicon.
Published in:
Physica Status Solidi (B), 1982, v. 111, n. 1, p. 375, doi. 10.1002/pssb.2221110143
By:
- Morante, J. R.;
- Carceller, J. E.;
- Cartujo, P.;
- Barbolla, J. J.
Publication type:
Article

Found: 13

A Novel Mesoporous CaO-Loaded In<sub>2</sub>O<sub>3</sub> Material for CO<sub>2</sub> Sensing.

Synthesis and Characterization of Chromium-Doped Mesoporous Tungsten Oxide for Gas Sensing Applications.

Nanocrystalline Metal Oxides from the Injection of Metal Oxide Sols in Coordinating Solutions: Synthesis, Characterization, Thermal Stabilization, Device Processing, and Gas-Sensing Properties.

Ultraviolet Raman scattering in ZnO nanowires: quasimode mixing and temperature effects.

Impact of Carbon Concentration on the Interface Density of States of Metal-Oxide Si<sub>1--x--y</sub> Ge<sub>x</sub>C<sub>y</sub> (Strained) Capacitators.

Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition.

Mesoporous Silica: A Suitable Adsorbent for Amines.

Photocatalytic Hydrogen Evolution Using Bi-Metallic (Ni/Pt) Na2Ti3O7 Whiskers: Effect of the Deposition Order.

Synthesis of Silicon Nanowires with Wurtzite Crystalline Structure by Using Standard Chemical Vapor Deposition.

Raman scattering and disorder effect in Cu<sub>2</sub>ZnSnS<sub>4</sub>.

Self-assembled quantum dots in a nanowire system for quantum photonics.

Shrinkage Effects of the Conduction Zone in the Electrical Properties of Metal Oxide Nanocrystals: The Basis for Room Temperature Conductometric Gas Sensor.

Analysis of Thermal Capture of the Acceptor Level of Gold in Silicon.