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- Title
Single pot electrochemical synthesis of functionalized and phosphorus doped graphene nanosheets for supercapacitor applications.
- Authors
Thirumal, V.; Pandurangan, A.; Jayavel, R.; Venkatesh, K.; Palani, N.; Ragavan, R.; Ilangovan, R.
- Abstract
Facile synthesis of heteroatom doped graphene nanosheets is one of the recent trends in the development of energy storage materials like supercapacitors. Phosphorus doped graphene sheets (P-GNS) have been prepared using electrochemical method (EC), which is the most emerging technique for large scale synthesis. X-ray diffraction studies of as-electrochemically phosphorus doped graphene nanosheets (EC-P-GNS) synthesized show a shift towards lower 2θ values due to functionalized graphene sheets. Scanning electron microscopy analysis of EC-P-GNS shows folded and twisted type graphene nanosheets and the average sheet thickness was measured to be 40 nm. High resolution-transmission electron microscopy depth profile confirms the presence of few layer transparent graphene with twisted type sheets. Fourier transform-infra red analysis of EC-P-GNS confirms the presence of functional groups in the doped graphene sheets. X-ray photoelectron microscopy analysis of EC-P-GNS shows 0.68 % phosphorus atomic doping which confirms the P-doping in graphene nanosheets. The electrochemical performance was analyzed using EC-P-GNS and shows good cycle performance compared to graphite. The electrochemical charge/discharge curves of EC-P-GNS give a high specific capacitance (Csp) of 290 F g along with high energy density 43.75 Wh kg. Based on the above merits including higher Csp, we hope that our EC-P-GNS would be a promising material for super capacitors. Further, the prepared single pot electrochemical anodic erosion strategy provides easy scale up for all heteroatoms doped graphene nanosheets synthesis.
- Subjects
PHOSPHORUS spectra; PHOSPHORUS compound synthesis; SUPERCAPACITOR performance; POWER capacitors; PHOTOELECTRON spectroscopy
- Publication
Journal of Materials Science: Materials in Electronics, 2015, Vol 26, Issue 8, p6319
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-3219-5