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- Title
Surface evolution of sputtered Cu(In,Ga)Se thin films under various annealing temperatures.
- Authors
Han, Jun-feng; Ouyang, Liang-qi; Zhuang, Da-ming; Zhao, Ming; Liao, Cheng; Liu, Jiang; Cha, Limei; Besland, M.-P.
- Abstract
In this work, copper indium gallium selenide (CIGS) thin films were prepared by sputtering CIGS quaternary target and subsequent annealing under Se atmosphere in the 240-550 °C range. X-ray diffraction (XRD), Grazing incidence x-ray diffraction (GIXRD), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were performed to investigate the crystalline structures and chemical compositions of the CIGS thin films. According to XRD, GIXRD and Raman analyses, the CIGS phase was splitted into CuSe phase and InSe phase at the very surface when CIGS was annealed at 240 and 270 °C. In addition, XRD patterns indicated a grain size growth with increasing temperature. XPS analyses contributed more information on the film surface chemistry. Indeed, O 1 s and Na 1 s signals were observed at the film surface above 380 °C, and were even increased from 450 to 550 °C. Simultaneously, the surface appeared to exhibit a Cu and Ga poor surface chemical composition. The strong correlation between O, Na and Cu atomic contents in the CIGS surface were discussed in the paper.
- Subjects
GALLIUM selenide; COPPER indium selenide; THIN films; SIMULATED annealing; GRAZING incidence
- Publication
Journal of Materials Science: Materials in Electronics, 2015, Vol 26, Issue 7, p4840
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-2991-6