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PL of low-density InAs/GaAs quantum dots with different bimodal populations.
- Published in:
- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 9, p. 599, doi. 10.1049/mnl.2016.0779
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- Publication type:
- Article
Observing Inquiry-Based Learning Environments Using the Scholastic Inquiry Observation Instrument.
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- International Journal of Science & Mathematics Education, 2018, v. 16, n. 8, p. 1455, doi. 10.1007/s10763-017-9843-1
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- Publication type:
- Article
Self-Assembly of Multiple Stacked Nanorings by Vertically Correlated Droplet Epitaxy.
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- Advanced Functional Materials, 2014, v. 24, n. 4, p. 530, doi. 10.1002/adfm.201302032
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- Publication type:
- Article
Low thermal drift in highly sensitive doped channel Al<sub>0.3</sub>Ga<sub>0.7</sub>As/GaAs/In<sub>0.2</sub>Ga<sub>0.8</sub>As micro-Hall element.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 776, doi. 10.1007/s10854-007-9408-0
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- Publication type:
- Article
Lateral and vertical ordered one-dimensional InGaAs/GaAs quantum structures.
- Published in:
- Applied Physics A: Materials Science & Processing, 2009, v. 96, n. 2, p. 307, doi. 10.1007/s00339-009-5204-4
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- Publication type:
- Article
Nanoscale Footprints of Self-Running Gallium Droplets on GaAs Surface.
- Published in:
- PLoS ONE, 2011, v. 6, n. 6, p. 1, doi. 10.1371/journal.pone.0020765
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- Publication type:
- Article
Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates.
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- Nanoscale Research Letters, 2010, v. 5, n. 8, p. 1320, doi. 10.1007/s11671-010-9645-7
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- Publication type:
- Article
High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam.
- Published in:
- Crystals (2073-4352), 2024, v. 14, n. 8, p. 724, doi. 10.3390/cryst14080724
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- Publication type:
- Article
Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy.
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- Crystals (2073-4352), 2023, v. 13, n. 11, p. 1557, doi. 10.3390/cryst13111557
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- Publication type:
- Article
Carrier Injection to In 0.4 Ga 0.6 As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures.
- Published in:
- Crystals (2073-4352), 2022, v. 12, n. 3, p. 319, doi. 10.3390/cryst12030319
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- Publication type:
- Article
Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs.
- Published in:
- Crystals (2073-4352), 2016, v. 6, n. 11, p. 144, doi. 10.3390/cryst6110144
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- Publication type:
- Article
Influence of Ga coverage on the sizes of GaAs quantum dash pairs grown by high temperature droplet epitaxy.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 7, p. 309, doi. 10.1002/pssr.201206236
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- Publication type:
- Article
Thermal etching process of microscale pits on the GaAs(001) surface.
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- Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 1, p. 25, doi. 10.1002/pssr.201105482
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- Publication type:
- Article
Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces.
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- Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 12, p. 371, doi. 10.1002/pssr.201004402
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- Publication type:
- Article
The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope.
- Published in:
- Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03688-2
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- Publication type:
- Article
Adhesive force between graphene nanoscale flakes and living biological cells.
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- Journal of Applied Toxicology, 2017, v. 37, n. 11, p. 1346, doi. 10.1002/jat.3478
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- Publication type:
- Article
Physicochemical characteristics of pristine and functionalized graphene.
- Published in:
- Journal of Applied Toxicology, 2017, v. 37, n. 11, p. 1288, doi. 10.1002/jat.3493
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- Publication type:
- Article
Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In<sub>x</sub>Ga<sub>1–x</sub>N Layers.
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- Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900591
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- Publication type:
- Article
Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-67961-z
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- Publication type:
- Article
Ordered SrTiO<sub>3</sub> Nanoripples Induced by Focused Ion Beam.
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- Nano-Micro Letters, 2012, v. 4, n. 4, p. 243, doi. 10.1007/BF03353721
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- Publication type:
- Article
Self-Organization of InAs Quantum-Dot Clusters Directed by Droplet Homoepitaxy.
- Published in:
- Small, 2007, v. 3, n. 2, p. 235, doi. 10.1002/smll.200600330
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- Publication type:
- Article
Inside Back Cover: Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment (Phys. Status Solidi A 6/2012).
- Published in:
- 2012
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- Publication type:
- Editorial
Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 6, p. 1075, doi. 10.1002/pssa.201127692
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- Publication type:
- Article
In<sub> x</sub>Ga<sub>1− x</sub>As quantum wire network-like and ordered checker board-like nanostructures on GaAs (311) by low In composition multi-layer stacking.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 1, p. 47, doi. 10.1002/pssa.201026611
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- Publication type:
- Article
Inside Back Cover: In<sub> x</sub>Ga<sub>1− x</sub>As quantum wire network-like and ordered checker board-like nanostructures on GaAs (311) by low In composition multi-layer stacking (Phys. Status Solidi A 1/2011).
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 1, p. n/a, doi. 10.1002/pssa.201026611
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- Publication type:
- Article
Modeling Study of Si 3 N 4 Waveguides on a Sapphire Platform for Photonic Integration Applications.
- Published in:
- Materials (1996-1944), 2024, v. 17, n. 16, p. 4148, doi. 10.3390/ma17164148
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- Publication type:
- Article
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy.
- Published in:
- Nanomaterials (2079-4991), 2024, v. 14, n. 11, p. 909, doi. 10.3390/nano14110909
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- Publication type:
- Article
Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift.
- Published in:
- Nano Research, 2022, v. 15, n. 3, p. 2405, doi. 10.1007/s12274-021-3855-4
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- Publication type:
- Article