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- Title
pin photodiode in 0.15 μm CMOS.
- Authors
Davidovic, M.; Wimbauer, T.; Zimmermann, H.
- Abstract
A vertical pin photodiode with a thick intrinsic layer is integrated in a 0.15 μm CMOS process. A deep n-well (N-ISO) allows increase of the reverse voltage of the pin photodiode far above the circuit supply voltage enabling a high drift velocity. Therefore, the large thickness of the intrinsic layer and the high reverse voltage lead to a high dynamic quantum efficiency and to a high bandwidth. The maximum responsivity of 0.46 A/W was measured at 730 nm corresponding to a quantum efficiency of 78.3%. For 850 nm, the –3 dB bandwidth of 700 MHz and for 650 nm the –3 dB bandwidth of 1.2 GHz was obtained at –8 V.
- Subjects
PIN photodiodes; COMPLEMENTARY metal oxide semiconductors; ELECTRIC potential; BANDWIDTHS; RESPONSIVITY (Detectors); QUANTUM efficiency; INTEGRATED circuits
- Publication
Electronics Letters (Wiley-Blackwell), 2014, Vol 50, Issue 17, p1229
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2014.1840