We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
New Wannier–Stark Localization Effects in Natural 6H–SiC Superlattice.
- Authors
Sankin, V. I.; Shkrebiı, P. P.; Savkina, N. S.; Kuznetsov, N. A.
- Abstract
A premature electric breakdown caused by the formation of a strong-field domain under conditions of negative differential conductivity in the 6H-SiC n[sup +]-n[sup -]-n[sup +] structure optimized for ultrahigh-frequency measurements was observed in the range of electric fields corresponding to the Bloch oscillation regime in a natural 6H-SiC superlattice. The experimental results and ensuing estimates indicate that this domain is mobile and, hence, oscillating, allowing the microwave oscillations that are rapidly damped under conditions of avalanche breakdown in a natural 6H-SiC superlattice to be forecasted. Crystal perfectness of a natural 6H-SiC superlattice made it possible to directly observe the Wannier-Stark localization up to electric breakdown, i.e., during the natural crystal lifetime. This was accomplished by the optical photoelectric transformation method in the multiplication regime for a photocurrent created by photons with above-bandgap energy. It was shown that the Wannier-Stark localization, which involves only electrons, occurs in natural 6H-SiC superlattice up to fields that are almost equal to the breakdown field in 6H-SiC, unresponsively to band mixing, i.e., to the fundamental destroyer of the Wannier-Stark localization.
- Subjects
SUPERLATTICES; ELECTRIC conductivity
- Publication
JETP Letters, 2003, Vol 77, Issue 1, p34
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/1.1561978